文献
J-GLOBAL ID:201202273707716162
整理番号:12A0508606
分子ビームエピタクシーによって(001)GaAs上に成長させたCdTeエピ層の構造品質とモルフォロジーに及ぼすZnTeバッファ層の効果
Effects of a ZnTe buffer layer on structural quality and morphology of CdTe epilayer grown on (001)GaAs by molecular beam epitaxy
著者 (8件):
ZHAO Jie
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
ZHAO Jie
(Materials Sci. Center, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, People’s Republic of China)
,
ZENG Yiping
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
ZENG Yiping
(Materials Sci. Center, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, People’s Republic of China)
,
LIU Chao
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
LIU Chao
(Materials Sci. Center, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, People’s Republic of China)
,
CUI Lijie
(Key Lab. of Semiconductor Materials Sci., Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083 ...)
,
CUI Lijie
(Materials Sci. Center, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, People’s Republic of China)
資料名:
Vacuum
(Vacuum)
巻:
86
号:
8
ページ:
1062-1066
発行年:
2012年02月29日
JST資料番号:
E0347A
ISSN:
0042-207X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)