文献
J-GLOBAL ID:201202276646842908
整理番号:12A0546395
4H-SiC JBSダイオードの漏れ電流
Leakage currents in 4H-SiC JBS diodes
著者 (8件):
IVANOV P. A.
(Russian Acad. of Sciences, Ioffe Physical Technical Inst., 194021, St. Petersburg, RUS)
,
GREKHOV I. V.
(Russian Acad. of Sciences, Ioffe Physical Technical Inst., 194021, St. Petersburg, RUS)
,
POTAPOV A. S.
(Russian Acad. of Sciences, Ioffe Physical Technical Inst., 194021, St. Petersburg, RUS)
,
KON’KOV O. I.
(Russian Acad. of Sciences, Ioffe Physical Technical Inst., 194021, St. Petersburg, RUS)
,
IL’INSKAYA N. D.
(Russian Acad. of Sciences, Ioffe Physical Technical Inst., 194021, St. Petersburg, RUS)
,
SAMSONOVA T. P.
(Russian Acad. of Sciences, Ioffe Physical Technical Inst., 194021, St. Petersburg, RUS)
,
KOROL’KOV O.
(Tallinn Univ. of Technol., Dep. of Electronics, Tallinn, Estonia)
,
SLEPTSUK N.
(Tallinn Univ. of Technol., Dep. of Electronics, Tallinn, Estonia)
資料名:
Semiconductors
(Semiconductors)
巻:
46
号:
3
ページ:
397-400
発行年:
2012年03月
JST資料番号:
T0093A
ISSN:
1063-7826
CODEN:
SMICES
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)