文献
J-GLOBAL ID:201202277404478981
整理番号:12A1371101
分子ビームエピタクシーを用いたオフ配向(100)GaAs基板上のGaAs/Ge/GaAsヘテロ構造に関するヒ素フリー環境におけるその場成長Ge
In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy
著者 (7件):
HUDAIT Mantu K.
(Bradley Dep. of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061)
,
ZHU Yan
(Bradley Dep. of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061)
,
JAIN Nikhil
(Bradley Dep. of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061)
,
VIJAYARAGHAVAN Siddharth
(Bradley Dep. of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061)
,
SAHA Avijit
(Bradley Dep. of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061)
,
MERRITT Travis
(Dep. of Physics, Virginia Tech, Blacksburg, Virginia 24061)
,
KHODAPARAST Giti A.
(Dep. of Physics, Virginia Tech, Blacksburg, Virginia 24061)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
30
号:
5
ページ:
051205-051205-11
発行年:
2012年09月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)