文献
J-GLOBAL ID:201202278879928031
整理番号:12A0549209
原子層堆積により成長させたc面ZnOエピタキシャル膜での底面積層欠陥と関連したフォトルミネッセンス
Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
著者 (7件):
YANG S.
(Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
,
KUO C. C.
(Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
,
LIU W.-r.
(Scientific Res. Div., National Synchrotron Radiation Res. Center, Hsinchu 30076, Taiwan)
,
LIN B. H.
(Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
,
HSU H.-c.
(Inst. of Electro-Optical Sci. and Engineering and Advanced Optoelectronic Technol. Center, National Cheng Kung Univ. ...)
,
HSU C.-h.
(Scientific Res. Div., National Synchrotron Radiation Res. Center, Hsinchu 30076, Taiwan)
,
HSIEH W. F.
(Dep. of Photonics and Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
10
ページ:
101907-101907-4
発行年:
2012年03月05日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)