文献
J-GLOBAL ID:201202280942009380
整理番号:12A0312166
ポリエーテルスルフォン基板上に形成された高分子ゲート絶縁体をもつZnO薄膜トランジスタ
ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate
著者 (8件):
HYUNG Gun Woo
(Dep. of Materials Sci. and Engineering, Hongik Univ., Seoul 121-791, KOR)
,
PARK Jaehoon
(School of Engineering and Computing Sciences, and Centre for Molecular and Nanoscale Electronics, Durham Univ. ...)
,
KOO Ja Ryong
(Dep. of Information Display, Hongik Univ., Seoul 121-791, KOR)
,
CHOI Kyung Min
(Dep. of Electronics Engineering, Kyungwon Univ., Seongnam 416-701, KOR)
,
KWON Sang Jik
(Dep. of Electronics Engineering, Kyungwon Univ., Seongnam 416-701, KOR)
,
CHO Eou Sik
(Dep. of Electronics Engineering, Kyungwon Univ., Seongnam 416-701, KOR)
,
KIM Yong Seog
(Dep. of Materials Sci. and Engineering, Hongik Univ., Seoul 121-791, KOR)
,
KIM Young Kwan
(Dep. of Information Display, Hongik Univ., Seoul 121-791, KOR)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
69
ページ:
27-30
発行年:
2012年03月
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)