文献
J-GLOBAL ID:201202280966713887
整理番号:12A1711867
電気ストレスAlGaN/GaN高電子移動度トランジスタ素子の透過型電子顕微鏡キャラクタリゼーション
Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices
著者 (10件):
JOHNSON Michael R.
(Dep. of Physics, Arizona State Univ., Tempe, Arizona 85287)
,
CULLEN David A.
(School of Materials, Arizona State Univ., Tempe, Arizona 85287)
,
LIU Lu
(Dep. of Chemical Engineering, Univ. of Florida, Gainesville, Florida 32611)
,
SHENG KANG Tsung
(Dep. of Chemical Engineering, Univ. of Florida, Gainesville, Florida 32611)
,
REN Fan
(Dep. of Chemical Engineering, Univ. of Florida, Gainesville, Florida 32611)
,
CHANG Chih-yang
(Dep. of Materials Sci. and Engineering, Univ. of Florida, Gainesville, Florida 32611)
,
PEARTON Stephen J.
(Dep. of Materials Sci. and Engineering, Univ. of Florida, Gainesville, Florida 32611)
,
JANG Soohwan
(Dep. of Chemical Engineering, Dankook Univ., Yongin 448-701, KOR)
,
JOHNSON Wayne J.
(Kopin Corp., Taunton, Massachusetts 02780)
,
SMITH David J.
(Dep. of Physics, Arizona State Univ., Tempe, Arizona 85287)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
30
号:
6
ページ:
062204-062204-7
発行年:
2012年11月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)