文献
J-GLOBAL ID:201202292626053511
整理番号:12A1763853
γ面サファイヤ基板上にパルスレーザ堆積によって成長したα面ZnO/Zn0.9Mg0.1O多重量子井戸の構造および光学特性
Structure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition
著者 (8件):
LI Y.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
PAN X. H.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
ZHANG Y. Z.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
HE H. P.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
JIANG J.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
HUANG J. Y.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
YE C. L.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
,
YE Z. Z.
(State Key Lab. of Silicon Materials, Dep. of Materials Sci. and Engineering, Zhejiang Univ., Hangzhou 310027, CHN)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
112
号:
10
ページ:
103519-103519-4
発行年:
2012年11月15日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)