文献
J-GLOBAL ID:201202293195144227
整理番号:12A0140436
高強度光波の存在する中でのKane型半導体の量子井戸,反転層およびNIPI超格子における二次元有効電子質量について
On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison
著者 (5件):
BHATTACHARYA S.
(Nanoscale Device Res. Lab., Center for Electronics Design and Technol., Indian Inst. Sci., Bangalore 560012, IND)
,
DE D.
(Dep. of Computer Sci. and Engineering, West Bengal Univ. of Technol., B.F. 142, Sector 1, Salt Lake City, Kolkata ...)
,
DE D.
(School of Physics, Univ. of Western Australia, The Univ. of Western Australia, 35 Stirling Highway Crawley, Perth ...)
,
ADHIKARI S.m.
(Dep. of Electronic Sci., Univ. of Calcutta, 92 Achrya Prafulla Chandra Road, Kolkata 700009, IND)
,
GHATAK K.p.
(Dep. of Electronic Sci., Univ. of Calcutta, 92 Achrya Prafulla Chandra Road, Kolkata 700009, IND)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
51
号:
2
ページ:
203-222
発行年:
2012年02月
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)