文献
J-GLOBAL ID:201202293227703266
整理番号:12A0385850
窒素ソースとしてアンモニアを用いた均一組成のGaN格子に整合したInAlNの分子線エピタキシー
Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source
著者 (6件):
HOI WONG Man
(Dep. of Electrical and Computer Engineering and Materials Dep., Univ. of California, Santa Barbara, California 93106 ...)
,
WU Feng
(Dep. of Electrical and Computer Engineering and Materials Dep., Univ. of California, Santa Barbara, California 93106 ...)
,
HURNI Christophe A.
(Dep. of Electrical and Computer Engineering and Materials Dep., Univ. of California, Santa Barbara, California 93106 ...)
,
CHOI Soojeong
(Dep. of Electrical and Computer Engineering and Materials Dep., Univ. of California, Santa Barbara, California 93106 ...)
,
SPECK James S.
(Dep. of Electrical and Computer Engineering and Materials Dep., Univ. of California, Santa Barbara, California 93106 ...)
,
MISHRA Umesh K.
(Dep. of Electrical and Computer Engineering and Materials Dep., Univ. of California, Santa Barbara, California 93106 ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
100
号:
7
ページ:
072107
発行年:
2012年02月13日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)