文献
J-GLOBAL ID:201202295093299407
整理番号:12A1523675
Mg中の積層欠陥に関する電子局在形態 第一原理研究
Electron localization morphology of the stacking faults in Mg: A first-principles study
著者 (8件):
WANG W.y.
(Dep. of Materials Sci. and Engineering, The Pennsylvania State Univ., Univ. Park, PA 16802, USA)
,
WANG W.y.
(State Key Lab. for Advanced Metals and Materials, Univ. of Sci. and Technol. Beijing, Beijing 100083, CHN)
,
SHANG S.l.
(Dep. of Materials Sci. and Engineering, The Pennsylvania State Univ., Univ. Park, PA 16802, USA)
,
WANG Y.
(Dep. of Materials Sci. and Engineering, The Pennsylvania State Univ., Univ. Park, PA 16802, USA)
,
DARLING K.a.
(US Army Res. Lab., Weapons and Materials Res. Directorate, RDRL-WMM-B, Aberdeen Proving Ground, MD 21005, USA)
,
MATHAUDHU S.n.
(Materials Sci. Div., US Army Res. Office, Res. Triangle Park, NC 27709, USA)
,
HUI X.d.
(State Key Lab. for Advanced Metals and Materials, Univ. of Sci. and Technol. Beijing, Beijing 100083, CHN)
,
LIU Z.k.
(Dep. of Materials Sci. and Engineering, The Pennsylvania State Univ., Univ. Park, PA 16802, USA)
資料名:
Chemical Physics Letters
(Chemical Physics Letters)
巻:
551
ページ:
121-125
発行年:
2012年11月01日
JST資料番号:
B0824A
ISSN:
0009-2614
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
オランダ (NLD)
言語:
英語 (EN)