文献
J-GLOBAL ID:201202299601066621
整理番号:12A0059108
単一電子トランジスタの集積のための電界放出誘起エレクトロマイグレーション法
Field-emission-induced electromigration method for the integration of single-electron transistors
著者 (6件):
UENO Shunsuke
(Dep. of Electrical and Electronic Engineering, Tokyo Univ. of Agriculture and Technol., Koganei, Tokyo 184-8588, JPN)
,
TOMODA Yusuke
(Dep. of Electrical and Electronic Engineering, Tokyo Univ. of Agriculture and Technol., Koganei, Tokyo 184-8588, JPN)
,
KUME Watari
(Dep. of Electrical and Electronic Engineering, Tokyo Univ. of Agriculture and Technol., Koganei, Tokyo 184-8588, JPN)
,
HANADA Michinobu
(Dep. of Electrical and Electronic Engineering, Tokyo Univ. of Agriculture and Technol., Koganei, Tokyo 184-8588, JPN)
,
TAKIYA Kazutoshi
(Dep. of Electrical and Electronic Engineering, Tokyo Univ. of Agriculture and Technol., Koganei, Tokyo 184-8588, JPN)
,
SHIRAKASHI Jun-ichi
(Dep. of Electrical and Electronic Engineering, Tokyo Univ. of Agriculture and Technol., Koganei, Tokyo 184-8588, JPN)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
258
号:
6
ページ:
2153-2156
発行年:
2012年01月01日
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)