文献
J-GLOBAL ID:201302200589650720
整理番号:13A0722061
高チャネル移動度をもつPチャネルSiC-IGBTの作製
Fabrication of a P-channel SiC-IGBT with High Channel Mobility
著者 (14件):
KATAKAMI S.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
KATAKAMI S.
(New Japan Radio Co. Ltd., Saitama, JPN)
,
FUJISAWA H.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
FUJISAWA H.
(Fuji Electric Co. Ltd., Tokyo, JPN)
,
TAKENAKA K.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
TAKENAKA K.
(Fuji Electric Co. Ltd., Tokyo, JPN)
,
ISHIMORI H.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
TAKASU S.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
OKAMOTO M.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
ARAI M.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
ARAI M.
(New Japan Radio Co. Ltd., Saitama, JPN)
,
YONEZAWA Y.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
YONEZAWA Y.
(Fuji Electric Co. Ltd., Tokyo, JPN)
,
FUKUDA K.
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
資料名:
Materials Science Forum
(Materials Science Forum)
巻:
740/742
ページ:
958-961
発行年:
2013年
JST資料番号:
D0716B
ISSN:
0255-5476
資料種別:
逐次刊行物 (A)
発行国:
スイス (CHE)
言語:
英語 (EN)