文献
J-GLOBAL ID:201302202154467862
整理番号:13A1473285
4H-SiC金属-半導体-金属紫外光検出器の温度依存特性の分析
Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector
著者 (7件):
Chen Bin
(School of Microelectronics, Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Materials ...)
,
Yang YinTang
(School of Microelectronics, Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Materials ...)
,
Xie XuanRong
(No. 771 Inst. of Microelectronics Technol., Xi’an)
,
Wang Ning
(School of Microelectronics, Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Materials ...)
,
Ma ZhenYang
(School of Microelectronics, Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Materials ...)
,
Song Kun
(School of Microelectronics, Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Materials ...)
,
Zhang XianJun
(School of Microelectronics, Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Materials ...)
資料名:
Chinese Science Bulletin
(Chinese Science Bulletin)
巻:
57
号:
34
ページ:
4427-4433
発行年:
2012年
JST資料番号:
A0206B
ISSN:
1001-6538
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)