文献
J-GLOBAL ID:201302220625803475
整理番号:13A1488391
SとSe含有雰囲気下での焼なましによるCu2ZnSn(S1-Sex)4薄膜の可変バンドギャップと改善した微細構造
Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1-x ,Se x )4 thin films by annealing under atmosphere containing S and Se
著者 (10件):
SHIN Seung Wook
(Center for Nanomaterials and Chemical Reactions, Inst. for Basic Sci., Daejeon 305-701, KOR)
,
KIM In Young
(Photonics Technol. Res. Inst., Dep. of Materials Sci. and Engineering, Chonnam National Univ., 300 Yongbong-Dong ...)
,
GURAV K.v.
(Photonics Technol. Res. Inst., Dep. of Materials Sci. and Engineering, Chonnam National Univ., 300 Yongbong-Dong ...)
,
JEONG Chae Hwan
(Solar City Center, Dev. of Advanced Components & Materials Korea Inst. of Industrial Technol., Gwangju 500-480, KOR)
,
YUN Jae Ho
(Photovoltaic Res. Group, Korea Inst. of Energy Res., 71-2 Jang-Dong Yuseong-Gu, Daejeon 305-343, KOR)
,
PATIL P.s.
(Photonics Technol. Res. Inst., Dep. of Materials Sci. and Engineering, Chonnam National Univ., 300 Yongbong-Dong ...)
,
PATIL P.s.
(Thin Film Materials Lab., Dep. of Physics, Shivaji Univ., Kolhapur 416004, IND)
,
LEE Jeong Yong
(Center for Nanomaterials and Chemical Reactions, Inst. for Basic Sci., Daejeon 305-701, KOR)
,
LEE Jeong Yong
(Dep. of Materials Sci. and Engineering, KAIST, Daehak-ro Yuseong-gu, Daejeon 305-701, KOR)
,
KIM Jin Hyeok
(Photonics Technol. Res. Inst., Dep. of Materials Sci. and Engineering, Chonnam National Univ., 300 Yongbong-Dong ...)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
13
号:
8
ページ:
1837-1843
発行年:
2013年10月
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)