文献
J-GLOBAL ID:201302221860143918
整理番号:13A0245968
InGaN/GaN量子井戸構造の高励起キャリア密度再結合ダイナミクス:効率低下の可能な関連性
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
著者 (6件):
DAVIES M. J.
(School of Physics and Astronomy, Photon Sci. Inst., Alan Turing Building, Univ. of Manchester, Manchester M13 9PL, GBR)
,
BADCOCK T. J.
(School of Physics and Astronomy, Photon Sci. Inst., Alan Turing Building, Univ. of Manchester, Manchester M13 9PL, GBR)
,
DAWSON P.
(School of Physics and Astronomy, Photon Sci. Inst., Alan Turing Building, Univ. of Manchester, Manchester M13 9PL, GBR)
,
KAPPERS M. J.
(Dep. of Materials Sci. and Metallurgy, Univ. of Cambridge, Pembroke Street, Cambridge CB2 3QZ, GBR)
,
OLIVER R. A.
(Dep. of Materials Sci. and Metallurgy, Univ. of Cambridge, Pembroke Street, Cambridge CB2 3QZ, GBR)
,
HUMPHREYS C. J.
(Dep. of Materials Sci. and Metallurgy, Univ. of Cambridge, Pembroke Street, Cambridge CB2 3QZ, GBR)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
102
号:
2
ページ:
022106-022106-3
発行年:
2013年01月14日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)