文献
J-GLOBAL ID:201302245348113302
整理番号:13A1079467
Hf0.5Zr0.5O3薄膜の厚みとアニーリング温度に従う相と強誘電特性の進展
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
著者 (6件):
HYUK PARK Min
(WCU Hybrid Materials Program, Dep. of Material Sci. & Engineering and Inter-university Semiconductor Res. Center ...)
,
JOON KIM Han
(WCU Hybrid Materials Program, Dep. of Material Sci. & Engineering and Inter-university Semiconductor Res. Center ...)
,
JIN KIM Yu
(WCU Hybrid Materials Program, Dep. of Material Sci. & Engineering and Inter-university Semiconductor Res. Center ...)
,
LEE Woongkyu
(WCU Hybrid Materials Program, Dep. of Material Sci. & Engineering and Inter-university Semiconductor Res. Center ...)
,
MOON Taehwan
(WCU Hybrid Materials Program, Dep. of Material Sci. & Engineering and Inter-university Semiconductor Res. Center ...)
,
SEONG HWANG Cheol
(WCU Hybrid Materials Program, Dep. of Material Sci. & Engineering and Inter-university Semiconductor Res. Center ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
102
号:
24
ページ:
242905-242905-5
発行年:
2013年06月17日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)