文献
J-GLOBAL ID:201302251209709004
整理番号:12A1809928
半絶縁性ヒ化ガリウム結晶のプラズマ処理による劣化抵抗の増加
Increasing the degradation resistance of semi-insulating gallium arsenide crystals by plasma processing
著者 (18件):
KLYUI N. I.
(National Acad. of Sciences of Ukraine, Lashkarev Inst. of Semiconductor Physics, 03028, Kiev, UKR)
,
KLYUI N. I.
(Kremenchug National Univ., 39600, Kremenchug, UKR)
,
KLYUI N. I.
(Silicon Ltd., 27507, Svetlovodsk, UKR)
,
LIPTUGA A. I.
(National Acad. of Sciences of Ukraine, Lashkarev Inst. of Semiconductor Physics, 03028, Kiev, UKR)
,
LIPTUGA A. I.
(Kremenchug National Univ., 39600, Kremenchug, UKR)
,
LIPTUGA A. I.
(Silicon Ltd., 27507, Svetlovodsk, UKR)
,
LOZINSKII V. B.
(National Acad. of Sciences of Ukraine, Lashkarev Inst. of Semiconductor Physics, 03028, Kiev, UKR)
,
LOZINSKII V. B.
(Kremenchug National Univ., 39600, Kremenchug, UKR)
,
LOZINSKII V. B.
(Silicon Ltd., 27507, Svetlovodsk, UKR)
,
OKSANICH A. P.
(National Acad. of Sciences of Ukraine, Lashkarev Inst. of Semiconductor Physics, 03028, Kiev, UKR)
,
OKSANICH A. P.
(Kremenchug National Univ., 39600, Kremenchug, UKR)
,
OKSANICH A. P.
(Silicon Ltd., 27507, Svetlovodsk, UKR)
,
TERBAN V. A.
(National Acad. of Sciences of Ukraine, Lashkarev Inst. of Semiconductor Physics, 03028, Kiev, UKR)
,
TERBAN V. A.
(Kremenchug National Univ., 39600, Kremenchug, UKR)
,
TERBAN V. A.
(Silicon Ltd., 27507, Svetlovodsk, UKR)
,
FOMOVSKII F. V.
(National Acad. of Sciences of Ukraine, Lashkarev Inst. of Semiconductor Physics, 03028, Kiev, UKR)
,
FOMOVSKII F. V.
(Kremenchug National Univ., 39600, Kremenchug, UKR)
,
FOMOVSKII F. V.
(Silicon Ltd., 27507, Svetlovodsk, UKR)
資料名:
Technical Physics Letters
(Technical Physics Letters)
巻:
38
号:
11
ページ:
1016-1019
発行年:
2012年11月
JST資料番号:
H0665A
ISSN:
1063-7850
CODEN:
TPLEED
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)