文献
J-GLOBAL ID:201302258655355121
整理番号:13A1698797
VO2/TiO2/サファイア薄膜ヘテロ構造の構造と半導体-金属転移特性との間の相関
Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures
著者 (9件):
BAYATI M.r.
(Intel Corp., IMO-SC, SC2, Santa Clara, CA 95054, USA)
,
BAYATI M.r.
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., EB-1, Raleigh, NC 27695-7907, USA)
,
MOLAEI R.
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., EB-1, Raleigh, NC 27695-7907, USA)
,
WU F.
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., EB-1, Raleigh, NC 27695-7907, USA)
,
BUDAI J.d.
(Materials Sci. and Technol. Div., Oak Ridge National Lab., Oak Ridge, TN 37831-6118, USA)
,
LIU Y.
(Intel Corp., IMO-SC, SC2, Santa Clara, CA 95054, USA)
,
NARAYAN R.j.
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., EB-1, Raleigh, NC 27695-7907, USA)
,
NARAYAN R.j.
(Joint Dep. of Biomedical Engineering, UNC Chapel Hill and North Carolina State Univ., EB-3, Raleigh, NC 27695-7115, USA)
,
NARAYAN J.
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., EB-1, Raleigh, NC 27695-7907, USA)
資料名:
Acta Materialia
(Acta Materialia)
巻:
61
号:
20
ページ:
7805-7815
発行年:
2013年12月
JST資料番号:
A0316A
ISSN:
1359-6454
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)