文献
J-GLOBAL ID:201302258660345100
整理番号:13A1298965
パルス堆積および誘導結合プラズマエッチングによる相変化材料のナノスケールギャップ充填
Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching
著者 (15件):
REN W. C.
(Chinese Acad. of Sciences, State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Micro-system ...)
,
REN W. C.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
REN W. C.
(Univ. of the Chinese Acad. of Sciences, 100049, Beijing, CHN)
,
LIU B.
(Chinese Acad. of Sciences, State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Micro-system ...)
,
SONG Z. T.
(Chinese Acad. of Sciences, State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Micro-system ...)
,
JING X. Z.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
ZHANG B. C.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
XIANG Y. H.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
XIAO H. B.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
XU J.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
WU G. P.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
QI R. J.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
DUAN S. Q.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
YU Q. Q.
(Semiconductor Manufacturing International Corp., 201203, Shanghai, CHN)
,
FENG S. L.
(Chinese Acad. of Sciences, State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Micro-system ...)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
112
号:
4
ページ:
999-1002
発行年:
2013年09月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)