文献
J-GLOBAL ID:201302261330938520
整理番号:13A1769400
ゾル-ゲル法により作製したデラフォサイトCuCr1-xMgxO2(0≦x≦12%)膜の電子遷移と電気輸送特性: 組成依存性の研究
Electronic transition and electrical transport properties of delafossite CuCr1-xMgxO2 (0 ≦ x ≦ 12%) films prepared by the sol-gel method: A composition dependence study
著者 (7件):
HAN M. J.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
DUAN Z. H.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
ZHANG J. Z.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
ZHANG S.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
LI Y. W.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
HU Z. G.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
CHU J. H.
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
114
号:
16
ページ:
163526-163526-9
発行年:
2013年10月28日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)