文献
J-GLOBAL ID:201302263447575138
整理番号:13A1342621
低温でのRFマグネトロンスパッタリングにより製作したZnO薄膜の構造転移
Structural transition of ZnO thin films produced by RF magnetron sputtering at low temperatures
著者 (8件):
ROSA A. M.
(Sao Paulo State Univ. (UNESP), Lab. of Technological Plasmas, Av. 3 de Marco, 511, Sorocaba, SP, BRA)
,
SILVA E. P.
(Sao Paulo State Univ. (UNESP), Lab. of Technological Plasmas, Av. 3 de Marco, 511, Sorocaba, SP, BRA)
,
CHAVES M.
(Sao Paulo State Univ. (UNESP), Lab. of Technological Plasmas, Av. 3 de Marco, 511, Sorocaba, SP, BRA)
,
TRINO L. D.
(Sao Paulo State Univ. (UNESP), Group of Advanced Materials, Av. Eng. Luiz Edmundo Carrijo Coube, 14-01, Bauru, SP, BRA)
,
LISBOA-FILHO P. N.
(Sao Paulo State Univ. (UNESP), Group of Advanced Materials, Av. Eng. Luiz Edmundo Carrijo Coube, 14-01, Bauru, SP, BRA)
,
SILVA T. F.
(Sao Paulo Univ. (USP), Lab. of Materials Analysis with Ion Beams, Rua do Matao, trav. R, 187, Sao Paulo, SP, BRA)
,
DURRANT S. F.
(Sao Paulo State Univ. (UNESP), Lab. of Technological Plasmas, Av. 3 de Marco, 511, Sorocaba, SP, BRA)
,
BORTOLETO J. R. R.
(Sao Paulo State Univ. (UNESP), Lab. of Technological Plasmas, Av. 3 de Marco, 511, Sorocaba, SP, BRA)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
24
号:
9
ページ:
3143-3148
発行年:
2013年09月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)