文献
J-GLOBAL ID:201302264974686173
整理番号:13A0937300
ポストアニーリングにより誘導したリンドープZnO膜の電気伝導率の転換機構
Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
著者 (8件):
LI Jichao
(Key Lab. of Physics and Technol. for Advanced Batteries, Ministry of Education and Dep. of Physics, Jilin Univ. ...)
,
YAO Bin
(Key Lab. of Physics and Technol. for Advanced Batteries, Ministry of Education and Dep. of Physics, Jilin Univ. ...)
,
LI Yongfeng
(Key Lab. of Physics and Technol. for Advanced Batteries, Ministry of Education and Dep. of Physics, Jilin Univ. ...)
,
DING Zhanhui
(State Key Lab. of Superhard Materials and Coll. of Physics, Jilin Univ., Changchun 130023, CHN)
,
XU Ying
(State Key Lab. of Superhard Materials and Coll. of Physics, Jilin Univ., Changchun 130023, CHN)
,
ZHANG Ligong
(State Key Lab. of Luminescence and Applications, Changchun Inst. of Optics, Fine Mechanics and Physics, Chinese ...)
,
ZHAO Haifeng
(State Key Lab. of Luminescence and Applications, Changchun Inst. of Optics, Fine Mechanics and Physics, Chinese ...)
,
SHEN Dezhen
(State Key Lab. of Luminescence and Applications, Changchun Inst. of Optics, Fine Mechanics and Physics, Chinese ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
113
号:
19
ページ:
193105-193105-6
発行年:
2013年05月21日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)