文献
J-GLOBAL ID:201302266851861542
整理番号:13A1033199
ウルツ鉱型GaN/AlxGa1-xN量子井戸中の界面光学フォノン及び電子-界面光学フォノン結合に対する三元混合結晶の影響
Ternary mixed crystal effects on interface optical phonon and electron-interface optical phonon coupling in wurtzite GaN/Al x Ga1- x N quantum wells
著者 (5件):
HUANG Wen-deng
(MOE Key Lab. for Nonequilibrium Synthesis and Modulation of Condensed Matter and Dep. of Applied Physics, Sci. of ...)
,
HUANG Wen-deng
(School of Physics and Telecommunication Engineering, Shaanxi Univ. of Technol., Hanzhong 723001, CHN)
,
CHEN Guang-de
(MOE Key Lab. for Nonequilibrium Synthesis and Modulation of Condensed Matter and Dep. of Applied Physics, Sci. of ...)
,
YE Hong-gang
(MOE Key Lab. for Nonequilibrium Synthesis and Modulation of Condensed Matter and Dep. of Applied Physics, Sci. of ...)
,
REN Ya-jie
(School of Physics and Telecommunication Engineering, Shaanxi Univ. of Technol., Hanzhong 723001, CHN)
資料名:
Optical Materials
(Optical Materials)
巻:
35
号:
8
ページ:
1571-1576
発行年:
2013年06月
JST資料番号:
W0468A
ISSN:
0925-3467
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)