文献
J-GLOBAL ID:201302269087258584
整理番号:13A0143842
III-V化合物半導体砒化ガリウムと窒化ガリウムにおける過渡電子輸送
Transient electron transport in the III-V compound semiconductors gallium arsenide and gallium nitride
著者 (4件):
HADI Walid A.
(Univ. of Windsor, Dep. of Electrical and Computer Engineering, 401 Sunset Avenue, N9B 3P4, Windsor, ON, CAN)
,
CHEEKOORI Reddiprasad
(The Univ. of British Columbia, School of Engineering, 3333 Univ. Way, V1V 1V7, Kelowna, BC, CAN)
,
SHUR Michael S.
(Rensselaer Polytechnic Inst., Dep. of Electrical, Computer, and Systems Engineering, 110 Eighth Street, 12180-3590 ...)
,
O’LEARY Stephen K.
(The Univ. of British Columbia, School of Engineering, 3333 Univ. Way, V1V 1V7, Kelowna, BC, CAN)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
24
号:
2
ページ:
807-813
発行年:
2013年02月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)