文献
J-GLOBAL ID:201302271696311658
整理番号:13A1618512
AlGaN/GaN高移動度トランジスタのための低抵抗の銅ベースのOhm接触
Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
著者 (8件):
WONG Yuen-yee
(Dep. of Materials Sci. and Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
,
CHEN Yu-kong
(Inst. of Lighting and Energy Photonics, National Chiao Tung Univ., Tainan 71150, Taiwan)
,
MAA Jer-shen
(Inst. of Lighting and Energy Photonics, National Chiao Tung Univ., Tainan 71150, Taiwan)
,
YU Hung-wei
(Dep. of Materials Sci. and Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
,
TU Yung-yi
(Dep. of Materials Sci. and Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
,
DEE Chang-fu
(Inst. of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia)
,
YAP Chi-chin
(School of Applied Physics, Fac. of Sci. and Technol., Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia)
,
YI CHANG Edward
(Dep. of Materials Sci. and Engineering, National Chiao Tung Univ., Hsinchu 30010, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
103
号:
15
ページ:
152104-152104-4
発行年:
2013年10月07日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)