文献
J-GLOBAL ID:201302275495825241
整理番号:13A0064256
Mnドープ(1-x)ZrTi2O6-xZnNb2O6(x=0.13~0.53)セラミックの相構造とマイクロ波誘電特性
Phase structure and microwave dielectric properties of Mn-doped (1-x)ZrTi2O6-xZnNb2O6(x = 0.13-0.53) ceramics
著者 (4件):
YU Shengquan
(Univ. of Electronic Sci. and Technol. of China, State Key Lab. of Electronic Thin Films and Integrated Devices ...)
,
TANG Bin
(Univ. of Electronic Sci. and Technol. of China, State Key Lab. of Electronic Thin Films and Integrated Devices ...)
,
ZHANG Shuren
(Univ. of Electronic Sci. and Technol. of China, State Key Lab. of Electronic Thin Films and Integrated Devices ...)
,
ZHOU Xiaohua
(Univ. of Electronic Sci. and Technol. of China, State Key Lab. of Electronic Thin Films and Integrated Devices ...)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
24
号:
1
ページ:
418-422
発行年:
2013年01月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)