文献
J-GLOBAL ID:201302275507946171
整理番号:13A0722049
4°および8°斜軸基板上での高電圧4H-SiC PiNダイオードの開発
Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
著者 (8件):
OKAMOTO Dai
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
TANAKA Yasunori
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MATSUMOTO Norio
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MIZUKAMI Makoto
(Toshiba Corp., Kanagawa, JPN)
,
OTA Chiharu
(Toshiba Corp., Kanagawa, JPN)
,
TAKAO Kazuto
(Toshiba Corp., Kanagawa, JPN)
,
FUKUDA Kenji
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
OKUMURA Hajime
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
資料名:
Materials Science Forum
(Materials Science Forum)
巻:
740/742
ページ:
907-910
発行年:
2013年
JST資料番号:
D0716B
ISSN:
0255-5476
資料種別:
逐次刊行物 (A)
発行国:
スイス (CHE)
言語:
英語 (EN)