文献
J-GLOBAL ID:201302275552015650
整理番号:13A1769474
絶縁体上の二軸歪極端薄層In0.53Ga0.47AsによるSi基板上の金属-酸化物-半導体電界効果トランジスタ及びその電子移動度の物理的理解
Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility
著者 (8件):
KIM Sanghyeon
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
YOKOYAMA Masafumi
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
NAKANE Ryosho
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
ICHIKAWA Osamu
(Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, JPN)
,
OSADA Takenori
(Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, JPN)
,
HATA Masahiko
(Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, JPN)
,
TAKENAKA Mitsuru
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
TAKAGI Shinichi
(Dep. of Electrical Engineering and Information Systems, The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
114
号:
16
ページ:
164512-164512-6
発行年:
2013年10月28日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)