文献
J-GLOBAL ID:201302282432677788
整理番号:13A1795995
垂直磁化CoFeB/MgO磁気トンネル接合と下層硬磁石による低電流磁壁運動MRAM
Low-Current Domain Wall Motion MRAM with Perpendicularly Magnetized CoFeB/MgO Magnetic Tunnel Junction and Underlying Hard Magnets
著者 (17件):
SUZUKI T.
(Renesas Electronics Corp., Kanagawa, JPN)
,
TANIGAWA H.
(Renesas Electronics Corp., Kanagawa, JPN)
,
KOBAYASHI Y.
(Renesas Electronics Corp., Kanagawa, JPN)
,
MORI K.
(Renesas Electronics Corp., Kanagawa, JPN)
,
ITO Y.
(Renesas Electronics Corp., Kanagawa, JPN)
,
OZAKI Y.
(Renesas Electronics Corp., Kanagawa, JPN)
,
SUEMITSU K.
(Renesas Electronics Corp., Kanagawa, JPN)
,
KITAMURA T.
(Renesas Electronics Corp., Kanagawa, JPN)
,
NAGAHARA K.
(Renesas Electronics Corp., Kanagawa, JPN)
,
KARIYADA E.
(Renesas Electronics Corp., Kanagawa, JPN)
,
OHSHIMA N.
(Renesas Electronics Corp., Kanagawa, JPN)
,
FUKAMI S.
(Tohoku Univ., Miyagi, JPN)
,
YAMANOUCHI M.
(Tohoku Univ., Miyagi, JPN)
,
IKEDA S.
(Tohoku Univ., Miyagi, JPN)
,
HAYASHI M.
(National Inst. Materials Sci., Ibaraki, JPN)
,
SAKAO M.
(Renesas Electronics Corp., Kanagawa, JPN)
,
OHNO H.
(Tohoku Univ., Miyagi, JPN)
資料名:
Digest of Technical Papers. Symposium on VLSI Technology
(Digest of Technical Papers. Symposium on VLSI Technology)
巻:
2013
ページ:
113-114
発行年:
2013年
JST資料番号:
A0035B
ISSN:
0743-1562
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)