文献
J-GLOBAL ID:201302285691736546
整理番号:13A0252712
半導体セレン化銅における構造転移誘導熱電特性
Structure-transformation-induced abnormal thermoelectric properties in semiconductor copper selenide
著者 (9件):
LIU Huili
(State Key Lab. of High Performance Ceramics and Superfine Microstructure, Shanghai Inst. of Ceramics, Chinese Acad. ...)
,
LIU Huili
(Graduate Univ. of Chinese Acad. of Sciences, Beijing 100049, CHN)
,
SHI Xun
(State Key Lab. of High Performance Ceramics and Superfine Microstructure, Shanghai Inst. of Ceramics, Chinese Acad. ...)
,
KIRKHAM Melanie
(Material Sci. and Technol. Div., Oak Ridge National Lab., Oak Ridge, TN 37831, USA)
,
WANG Hsin
(Material Sci. and Technol. Div., Oak Ridge National Lab., Oak Ridge, TN 37831, USA)
,
LI Qiang
(Condensed Matter Physics and Materials Sci. Dep., Brookhaven National Lab., Upton, NY 11973, USA)
,
UHER Ctirad
(Dep. of Physics, Univ. of Michigan, Ann Arbor, MI 48109, USA)
,
ZHANG Wenqing
(State Key Lab. of High Performance Ceramics and Superfine Microstructure, Shanghai Inst. of Ceramics, Chinese Acad. ...)
,
CHEN Lidong
(State Key Lab. of High Performance Ceramics and Superfine Microstructure, Shanghai Inst. of Ceramics, Chinese Acad. ...)
資料名:
Materials Letters
(Materials Letters)
巻:
93
ページ:
121-124
発行年:
2013年02月15日
JST資料番号:
E0935A
ISSN:
0167-577X
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
オランダ (NLD)
言語:
英語 (EN)