文献
J-GLOBAL ID:201302287998505773
整理番号:13A1086424
InとGaのドーピングによるBi0.4Sb1.6Te3の熱電性能の強化
Enhancement of the Thermoelectric Performance of Bi0.4Sb1.6Te3 Alloys by In and Ga Doping
著者 (10件):
LEE Kyu-Hyoung
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
HWANG Sungwoo
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
RYU Byungki
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
AHN Kyunghan
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
ROH Jongwook
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
YANG Daejin
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
LEE Sang-Mock
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
KIM Hyunsik
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
,
KIM Hyunsik
(California Inst. of Technol., Dep. of Materials Sci., 91125, Pasadena, CA, USA)
,
KIM Sang-Il
(Samsung Advanced Inst. of Technol., Advanced Materials Res. Center, 446-712, Yong-In, KOR)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
42
号:
7
ページ:
1617-1621
発行年:
2013年07月
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)