文献
J-GLOBAL ID:201302288237114203
整理番号:13A1283126
薄膜太陽電池に向けたホウ素ドープp型BaSi2エピタキシャル膜のSi(111)基板上への分子線エピタキシー
Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
著者 (12件):
AJMAL KHAN M.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
HARA Kosuke O.
(Inst. for Materials Res., Tohoku Univ., Sendai, Miyagi 980-8577, JPN)
,
NAKAMURA Kotaro
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
DU Weijie
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
BABA Masakazu
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
TOH Katsuaki
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
SUZUNO Mitsushi
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
TOKO Kaoru
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
USAMI Noritaka
(Inst. for Materials Res., Tohoku Univ., Sendai, Miyagi 980-8577, JPN)
,
USAMI Noritaka
(Japan Sci. and Technol. Agency, CREST, Chiyoda, Tokyo 102-0075, JPN)
,
SUEMASU Takashi
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
SUEMASU Takashi
(Japan Sci. and Technol. Agency, CREST, Chiyoda, Tokyo 102-0075, JPN)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
378
ページ:
201-204
発行年:
2013年09月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)