文献
J-GLOBAL ID:201302290493619449
整理番号:13A0937294
異なるキャッピングの組み合わせの分子ビームエピタキシャル成長InAsサブモノレーヤ量子ドットに関する総合的研究
Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinations
著者 (5件):
SENGUPTA Saumya
(Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai 400076, Maharashtra, IND)
,
MANDAL Arjun
(Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai 400076, Maharashtra, IND)
,
GHADI Hemant
(Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai 400076, Maharashtra, IND)
,
CHAKRABARTI Subhananda
(Dep. of Electrical Engineering, Indian Inst. of Technol. Bombay, Mumbai 400076, Maharashtra, IND)
,
MATHUR Keshav Lal
(Electronics and Communication Engineering Dep., Sardar Vallabhbhai National Inst. Technol., Surat 395007, Gujarat, IND)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
31
号:
3
ページ:
03C136-03C136-4
発行年:
2013年05月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)