文献
J-GLOBAL ID:201302291550329424
整理番号:13A1466119
光電子用途の新しいSnO2:Al/ZnO:F二重層の製作
Fabrication of a novel SnO2:Al/ZnO:F bi-layer for opto-electronic applications
著者 (5件):
RAVIKUMAR P.
(A.V.V.M. Sri Pushpam Coll. (Autonomous), P.G and Res. Dep. of Physics, Poondi, 613 503, Thanjavur, Tamil Nadu, IND)
,
RAVICHANDRAN K.
(A.V.V.M. Sri Pushpam Coll. (Autonomous), P.G and Res. Dep. of Physics, Poondi, 613 503, Thanjavur, Tamil Nadu, IND)
,
SAKTHIVEL B.
(A.V.V.M. Sri Pushpam Coll. (Autonomous), P.G and Res. Dep. of Physics, Poondi, 613 503, Thanjavur, Tamil Nadu, IND)
,
BEGUM N. Jabena
(A.V.V.M. Sri Pushpam Coll. (Autonomous), P.G and Res. Dep. of Physics, Poondi, 613 503, Thanjavur, Tamil Nadu, IND)
,
RAVICHANDRAN A. T.
(National Coll. (Autonomous), P.G and Res. Dep. of Physics, 620 001, Tiruchirappalli, Tamil Nadu, IND)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
24
号:
10
ページ:
4092-4097
発行年:
2013年10月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)