文献
J-GLOBAL ID:201302292515996708
整理番号:13A0854410
InAlN/AlN/GaNにもとづく二重チャネル高電子移動度トランジスタにおけるトラップ状態
Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors
著者 (8件):
ZHANG Kai
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
XUE Junshuai
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
CAO Mengyi
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
YANG Liyuan
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
CHEN Yonghe
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
ZHANG Jincheng
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
MA Xiaohua
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
,
HAO Yue
(Key Lab. of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian Univ., Xi’an ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
113
号:
17
ページ:
174503-174503-5
発行年:
2013年05月07日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)