文献
J-GLOBAL ID:201302293678560202
整理番号:13A0953821
有機金属気相成長法によって成長したGaAsSb/GaAs/GaAsP歪補償型量子井戸構造の光学的キャラクタリゼーション
Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy
著者 (7件):
HUANG C.t.
(Dep. of Electronic Engineering, National Taiwan Univ. of Sci. and Technol., Taipei 106, Taiwan)
,
WU J.d.
(Dep. of Electronic Engineering, National Taiwan Univ. of Sci. and Technol., Taipei 106, Taiwan)
,
LIU C.f.
(Dep. of Electronic Engineering, National Taiwan Univ. of Sci. and Technol., Taipei 106, Taiwan)
,
HUANG Y.s.
(Dep. of Electronic Engineering, National Taiwan Univ. of Sci. and Technol., Taipei 106, Taiwan)
,
WAN C.t.
(Inst. of Microelectronics, and Dep. of Electrical Engineering, National Cheng Kung Univ., Tainan701, Taiwan)
,
SU Y.k.
(Inst. of Microelectronics, and Dep. of Electrical Engineering, National Cheng Kung Univ., Tainan701, Taiwan)
,
TIONG K.k.
(Dep. of Electrical Engineering, National Taiwan Ocean Univ., Keelung 202, Taiwan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
370
ページ:
182-185
発行年:
2013年05月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)