文献
J-GLOBAL ID:201402204480133206
整理番号:13A1951385
GaInN/GaN量子井戸における室温の励起子再結合
Room temperature excitonic recombination in GaInN/GaN quantum wells
著者 (8件):
LANGER Torsten
(Inst. of Applied Physics, Technische Universitaet Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig, DEU)
,
CHERNIKOV Alexey
(Fac. of Physics and Materials Sci. Center, Philipps-Universitaet Marburg, Renthof 5, 35032 Marburg, DEU)
,
KALINCEV Dimitri
(Fac. of Physics and Materials Sci. Center, Philipps-Universitaet Marburg, Renthof 5, 35032 Marburg, DEU)
,
GERHARD Marina
(Fac. of Physics and Materials Sci. Center, Philipps-Universitaet Marburg, Renthof 5, 35032 Marburg, DEU)
,
BREMERS Heiko
(Inst. of Applied Physics, Technische Universitaet Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig, DEU)
,
ROSSOW Uwe
(Inst. of Applied Physics, Technische Universitaet Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig, DEU)
,
KOCH Martin
(Fac. of Physics and Materials Sci. Center, Philipps-Universitaet Marburg, Renthof 5, 35032 Marburg, DEU)
,
HANGLEITER Andreas
(Inst. of Applied Physics, Technische Universitaet Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig, DEU)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
103
号:
20
ページ:
202106-202106-5
発行年:
2013年11月11日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)