文献
J-GLOBAL ID:201402212556337330
整理番号:13A1951793
Siをドープした酸化ハフニウム複合体薄膜のウェイクアップ効果
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
著者 (9件):
ZHOU Dayu
(School of Materials Sci. and Engineering, Dalian Univ. of Technol., Dalian 116024, CHN)
,
XU Jin
(Dep. of Electronic Engineering, Dalian Neusoft Univ. of Information, Dalian 116023, CHN)
,
LI Qing
(School of Materials Sci. and Engineering, Dalian Univ. of Technol., Dalian 116024, CHN)
,
GUAN Yan
(School of Materials Sci. and Engineering, Dalian Univ. of Technol., Dalian 116024, CHN)
,
CAO Fei
(Key Lab. of Inorganic Functional Materials and Devices, Shanghai Inst. of Ceramics, Chinese Acad. of Sciences ...)
,
DONG Xianlin
(Key Lab. of Inorganic Functional Materials and Devices, Shanghai Inst. of Ceramics, Chinese Acad. of Sciences ...)
,
MUELLER Johannes
(Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden, DEU)
,
SCHENK Tony
(Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, DEU)
,
SCHROEDER Uwe
(Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, DEU)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
103
号:
19
ページ:
192904-192904-4
発行年:
2013年11月04日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)