文献
J-GLOBAL ID:201402257891221676
整理番号:14A1044736
超低ターンオン電圧のInP系DHBTs向けに高In含有かつ高Sb含有でMOCVD成長した圧縮歪CドープInxGa1-xAs1-ySby
MOCVD-grown compressively strained C-doped In x Ga1-x As1-y Sb y with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
著者 (11件):
HOSHI Takuya
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
HOSHI Takuya
(Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, JPN)
,
KASHIO Norihide
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
SUGIYAMA Hiroki
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
YOKOYAMA Haruki
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
KURISHIMA Kenji
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
IDA Minoru
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
MATSUZAKI Hideaki
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
KOHTOKU Masaki
(NTT Photonics Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
GOTOH Hideki
(NTT Basic Res. Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, JPN)
,
GOTOH Hideki
(Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, JPN)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
404
ページ:
172-176
発行年:
2014年10月15日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)