文献
J-GLOBAL ID:201402266376203532
整理番号:14A0007842
プラズモニクス応用のための制御可能な高キャリア濃度を持つGeドープGaN
Ge doped GaN with controllable high carrier concentration for plasmonic applications
著者 (11件):
KIRSTE Ronny
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
HOFFMANN Marc P.
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
SACHET Edward
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
BOBEA Milena
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
BRYAN Zachary
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
BRYAN Isaac
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
NENSTIEL Christian
(Inst. fuer Festkoerperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin, DEU)
,
HOFFMANN Axel
(Inst. fuer Festkoerperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin, DEU)
,
MARIA Jon-paul
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
COLLAZO Ramon
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
SITAR Zlatko
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
103
号:
24
ページ:
242107-242107-4
発行年:
2013年12月09日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)