文献
J-GLOBAL ID:201402272046958847
整理番号:14A0706541
負の電子親和度をもつp-i-nダイオード型エミッタの電子放出が起こる場所の研究
Investigation of electron emission site of p-i-n diode-type emitters with negative electron affinity
著者 (21件):
TAKEUCHI Daisuke
(Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
TAKEUCHI Daisuke
(JST, Ibaraki, JPN)
,
TAKEUCHI Daisuke
(JST-CREST, Ibaraki, JPN)
,
KOIZUMI Satoshi
(National Inst. Materials Sci. (NIMS), Ibaraki, JPN)
,
KOIZUMI Satoshi
(JST, Ibaraki, JPN)
,
KOIZUMI Satoshi
(JST-CREST, Ibaraki, JPN)
,
MAKINO Toshiharu
(Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MAKINO Toshiharu
(JST, Ibaraki, JPN)
,
MAKINO Toshiharu
(JST-CREST, Ibaraki, JPN)
,
KATO Hiromitsu
(Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
KATO Hiromitsu
(JST, Ibaraki, JPN)
,
KATO Hiromitsu
(JST-CREST, Ibaraki, JPN)
,
OKUSHI Hideyo
(Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
OKUSHI Hideyo
(JST, Ibaraki, JPN)
,
OKUSHI Hideyo
(JST-CREST, Ibaraki, JPN)
,
OHASHI Hiromichi
(Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
OHASHI Hiromichi
(JST, Ibaraki, JPN)
,
OHASHI Hiromichi
(JST-CREST, Ibaraki, JPN)
,
YAMASAKI Satoshi
(Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
YAMASAKI Satoshi
(JST, Ibaraki, JPN)
,
YAMASAKI Satoshi
(JST-CREST, Ibaraki, JPN)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
53
号:
5S1
ページ:
05FP07.1-05FP07.5
発行年:
2014年05月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)