文献
J-GLOBAL ID:201402284850238170
整理番号:14A0143101
全金属性の電気ゲート付2H-TaSe2薄膜スイッチと論理回路
All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits
著者 (11件):
RENTERIA J.
(Nano-Device Lab., Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of California-Riverside ...)
,
SAMNAKAY R.
(Materials Sci. and Engineering Program, Bourns Coll. of Engineering, Univ. of California-Riverside, Riverside ...)
,
JIANG C.
(Nano-Device Lab., Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of California-Riverside ...)
,
POPE T. R.
(Dep. of Chemistry, Univ. of Georgia, Athens, Georgia 30602, USA)
,
GOLI P.
(Materials Sci. and Engineering Program, Bourns Coll. of Engineering, Univ. of California-Riverside, Riverside ...)
,
YAN Z.
(Nano-Device Lab., Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of California-Riverside ...)
,
WICKRAMARATNE D.
(Lab. for Terascale and Terahertz Electronics, Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of ...)
,
SALGUERO T. T.
(Dep. of Chemistry, Univ. of Georgia, Athens, Georgia 30602, USA)
,
KHITUN A. G.
(Nano-Device Lab., Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of California-Riverside ...)
,
LAKE R. K.
(Lab. for Terascale and Terahertz Electronics, Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of ...)
,
BALANDIN A. A.
(Nano-Device Lab., Dep. of Electrical Engineering, Bourns Coll. of Engineering, Univ. of California-Riverside ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
115
号:
3
ページ:
034305-034305-6
発行年:
2014年01月21日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)