文献
J-GLOBAL ID:201502200716841594
整理番号:15A0700967
1°のオフ角を持つ4H-SiCのC面上におけるホモエピタキシャル成長と積層欠陥の研究
Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle
著者 (16件):
MASUMOTO Keiko
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
MASUMOTO Keiko
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
ASAMIZU Hirokuni
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
ASAMIZU Hirokuni
(ROHM Co., Ltd., Kyoto, JPN)
,
TAMURA Kentaro
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
TAMURA Kentaro
(ROHM Co., Ltd., Kyoto, JPN)
,
KUDOU Chiaki
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
KUDOU Chiaki
(Panasonic Corp., Toyama, JPN)
,
NISHIO Johji
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
NISHIO Johji
(Toshiba Corp., Kawasaki, JPN)
,
KOJIMA Kazutoshi
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
KOJIMA Kazutoshi
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
OHNO Toshiyuki
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
OHNO Toshiyuki
(Hitachi, Ltd., Tokyo, JPN)
,
OKUMURA Hajime
(R&D Partnership for Future Power Electronics Technol., Ibaraki, JPN)
,
OKUMURA Hajime
(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
54
号:
4S
ページ:
04DP04.1-04DP04.5
発行年:
2015年04月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)