文献
J-GLOBAL ID:201502202902862430
整理番号:15A1165106
SiO2/SiNによる表面不動態化がAlGaN/GaN/Si HEMTの深い準位に及ぼす効果のキャラクタリゼーション
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
著者 (7件):
JABLI Fikria
(Univ. of Monastir, Lab. of Micro-Optoelectronics and Nanostructures, Monastir 5000, Tunisia)
,
ZAIDI Mohamed Ali
(Univ. of Monastir, Lab. of Micro-Optoelectronics and Nanostructures, Monastir 5000, Tunisia)
,
ZAIDI Mohamed Ali
(Coll. of Sci. Al- Zulfi, Al Majmaah Univ., Box: 1712, 11932, Saudi Arabia)
,
BEN Hamadi Nawfel
(Chemistry Dep., Coll. of Sci., IMSIU (Al Imam Mohammad Ibn Saud Islamic University), Riyadh 11623, Saudi Arabia)
,
ALTHOYAIB S.
(Coll. of Sci., Dep. of Physics, Qassim Univ., Buraidah 51452, Saudi Arabia)
,
GASSOUMI Malek
(Univ. of Monastir, Lab. of Micro-Optoelectronics and Nanostructures, Monastir 5000, Tunisia)
,
GASSOUMI Malek
(Coll. of Sci., Dep. of Physics, Qassim Univ., Buraidah 51452, Saudi Arabia)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
653
ページ:
624-628
発行年:
2015年12月25日
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)