文献
J-GLOBAL ID:201502204953384129
整理番号:15A0996021
HgCdTe表面不活性化のためのICPECVD窒化シリコン膜の調査
Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation
著者 (7件):
ZHANG J.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
,
UMANA-MEMBRENO G.A.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
,
GU R.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
,
LEI W.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
,
ANTOSZEWSKI J.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
,
DELL J.M.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
,
FARAONE L.
(The Univ. of Western Australia, School of Electrical, Electronic and Computer Engineering, 35 Stirling Highway, 6009 ...)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
44
号:
9
ページ:
2990-3001
発行年:
2015年09月
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)