文献
J-GLOBAL ID:201502205051041578
整理番号:15A0908468
Si (111)基板上のGaNナノワイヤの歪み分布の高解像度X線回折解析
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate
著者 (10件):
STANCHU Hryhorii
(V. Lashkaryov Inst. of Semiconductor Physics, National Acad. of Sci. of Ukraine, Kyiv, UKR)
,
KLADKO Vasyl
(V. Lashkaryov Inst. of Semiconductor Physics, National Acad. of Sci. of Ukraine, Kyiv, UKR)
,
KUCHUK Andrian V
(V. Lashkaryov Inst. of Semiconductor Physics, National Acad. of Sci. of Ukraine, Kyiv, UKR)
,
KUCHUK Andrian V
(Univ. Arkansas, AR, USA)
,
SAFRIUK Nadiia
(V. Lashkaryov Inst. of Semiconductor Physics, National Acad. of Sci. of Ukraine, Kyiv, UKR)
,
BELYAEV Alexander
(V. Lashkaryov Inst. of Semiconductor Physics, National Acad. of Sci. of Ukraine, Kyiv, UKR)
,
WIERZBICKA Aleksandra
(Inst. of Physics, Polish Acad. of Sci., Warsaw, POL)
,
SOBANSKA Marta
(Inst. of Physics, Polish Acad. of Sci., Warsaw, POL)
,
KLOSEK Kamil
(Inst. of Physics, Polish Acad. of Sci., Warsaw, POL)
,
ZYTKIEWICZ Zbigniew R
(Inst. of Physics, Polish Acad. of Sci., Warsaw, POL)
資料名:
Nanoscale Research Letters (Web)
(Nanoscale Research Letters (Web))
巻:
10
号:
1
ページ:
10:51 (WEB ONLY)
発行年:
2015年12月
JST資料番号:
U7001A
ISSN:
1931-7573
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)