文献
J-GLOBAL ID:201502205152471026
整理番号:15A1057930
テトラセン薄膜電界効果トランジスタにおける厚さ依存移動度
Thickness-dependent mobility in tetracene thin-film field-effect-transistors
著者 (4件):
SHI Jun
(Dep. of Physics and Guelph-Waterloo Physics Inst., Univ. of Guelph, Guelph, Ontario N1G 2W1, CAN)
,
JIANG De-tong
(Dep. of Physics and Guelph-Waterloo Physics Inst., Univ. of Guelph, Guelph, Ontario N1G 2W1, CAN)
,
DUTCHER John R.
(Dep. of Physics and Guelph-Waterloo Physics Inst., Univ. of Guelph, Guelph, Ontario N1G 2W1, CAN)
,
QIN Xiao-rong
(Dep. of Physics and Guelph-Waterloo Physics Inst., Univ. of Guelph, Guelph, Ontario N1G 2W1, CAN)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
33
号:
5
ページ:
050604-050604-6
発行年:
2015年09月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)