文献
J-GLOBAL ID:201502207258831547
整理番号:15A1173219
GaSb(Bi)/AlGaSb量子井戸検出赤外フォトリフレクタンスによる電子準位に及ぼすビスマスの影響【Powered by NICT】
Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance
著者 (9件):
Chen Xiren
(Shanghai Inst. of Technical Physics, Chinese Acad. of Sciences National Lab. for Infrared Physics, Shanghai)
,
Song Yuxin
(Shanghai Inst. of Microsystem and Information Technol., Chinese Acad. of Sciences State Key Lab. of Functional ...)
,
Zhu Liangqing
(Shanghai Inst. of Technical Physics, Chinese Acad. of Sciences National Lab. for Infrared Physics, Shanghai)
,
Qi Zhen
(Shanghai Inst. of Technical Physics, Chinese Acad. of Sciences National Lab. for Infrared Physics, Shanghai)
,
Zhu Liang
(Shanghai Inst. of Technical Physics, Chinese Acad. of Sciences National Lab. for Infrared Physics, Shanghai)
,
Zha Fangxing
(Dep. of Physics, Shanghai Univ., Shanghai)
,
Guo Shaoling
(Shanghai Inst. of Technical Physics, Chinese Acad. of Sciences National Lab. for Infrared Physics, Shanghai)
,
Wang Shumin
(Shanghai Inst. of Microsystem and Information Technol., Chinese Acad. of Sciences State Key Lab. of Functional ...)
,
Shao Jun
(Shanghai Inst. of Technical Physics, Chinese Acad. of Sciences National Lab. for Infrared Physics, Shanghai)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
32
号:
6
ページ:
067301-1-067301-4
発行年:
2015年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)