文献
J-GLOBAL ID:201502207333643778
整理番号:15A1215702
n-GaAsへのOhm接触に及ぼすNi/AuGe/Pt/Au中Pt拡散障壁層の効果【Powered by NICT】
Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs
著者 (6件):
Wang Yong
(Changchun Univ. of Sci. and Technol. National Key Lab. on High Power Semiconductor Lasers, Changchun)
,
Liu Dandan
(Changchun Univ. of Sci. and Technol. National Key Lab. on High Power Semiconductor Lasers, Changchun)
,
Feng Guoqing
(Changchun Univ. of Sci. and Technol. National Key Lab. on High Power Semiconductor Lasers, Changchun)
,
Ye Zhen
(Changchun Univ. of Sci. and Technol. National Key Lab. on High Power Semiconductor Lasers, Changchun)
,
Gao Zhanqi
(Changchun Univ. of Sci. and Technol. National Key Lab. on High Power Semiconductor Lasers, Changchun)
,
Wang Xiaohua
(Changchun Univ. of Sci. and Technol. National Key Lab. on High Power Semiconductor Lasers, Changchun)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
36
号:
3
ページ:
036002-1-036002-3
発行年:
2015年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)