文献
J-GLOBAL ID:201502207649343407
整理番号:15A0939768
アモノサーマル基板を用いて作製したHVPE-GaN種結晶上へのGaN結晶のアモノサーマル成長
Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates
著者 (12件):
KUCHARSKI R.
(AMMONO SA, Prusa 2, 00-493 Warsaw, POL)
,
ZAJAC M.
(AMMONO SA, Prusa 2, 00-493 Warsaw, POL)
,
PUCHALSKI A.
(AMMONO SA, Prusa 2, 00-493 Warsaw, POL)
,
SOCHACKI T.
(Inst. of High Pressure Physics, Polish Acad. of Sci., Sokolowska 29/37, 01-142 Warsaw, POL)
,
SOCHACKI T.
(TopGaN Sp.z o.o., Sokolowska 29/37, 01-142 Warsaw, POL)
,
BOCKOWSKI M.
(Inst. of High Pressure Physics, Polish Acad. of Sci., Sokolowska 29/37, 01-142 Warsaw, POL)
,
BOCKOWSKI M.
(TopGaN Sp.z o.o., Sokolowska 29/37, 01-142 Warsaw, POL)
,
WEYHER J.L.
(Inst. of High Pressure Physics, Polish Acad. of Sci., Sokolowska 29/37, 01-142 Warsaw, POL)
,
IWINSKA M.
(Inst. of High Pressure Physics, Polish Acad. of Sci., Sokolowska 29/37, 01-142 Warsaw, POL)
,
SERAFINCZUK J.
(Fac. of Microsystem Electronics and Photonics, Wroclaw Univ. of Technol., Janiszewskiego 11/17, 50-372 Wroclaw, POL)
,
KUDRAWIEC R.
(Inst. of Physics, Wroclaw Univ. of Technol., Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, POL)
,
SIEMIATKOWSKI Z.
(Fac. of Mechanical Engineering, Kazimierz Pulaski Univ. of Technol. and Humanities, Malczewskiego 29, 26-600 Radom, POL)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
427
ページ:
1-6
発行年:
2015年10月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)